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| HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features * 20A, 500V * Latch Free Operation * Typical Fall Time < 500ns * High Input Impedance * Low Conduction Loss * With Anti-Parallel Diode * tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors. PACKAGING AVAILABILITY PART NUMBER HGTG20N50C1D PACKAGE TO-247 BRAND G20N50C1D Terminal Diagram C G E NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG20N50C1D 500 500 26 20 35 20 26 20 75 0.8 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL NOTE: 1. TJ = +150oC, Minimum RGE = 25 without latch INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2796.3 3-71 Specifications HGTG20N50C1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 1mA, VGE = 0V VGE = VCE, IC = 1mA VCE = 500V TC = Gate-Emitter Leakage Current Collector-Emitter On-Voltage IGES VCE(SAT) +125oC, VCE = 500V MIN 500 2 400 (Typ) IC = 20A, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 IEC = 20A IEC = 20A, diEC /dt = 100A/s MAX 4.5 250 1000 100 2.5 3.2 6 (Typ) 33 (Typ) 50 50 400 500 UNITS V V A A nA V V V nC ns ns ns ns J oC/W VGE = 20V, VCE = 0V IC = 20A, VGE = 10V IC = 35A, VGE = 20V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Thermal Resistance Junction-to-Case (IGBT) Thermal Resistance of Diode Diode Forward Voltage Diode Reverse Recovery Time VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI WOFF RJC RJC VEC tRR IC = 10A, VCE = 10V IC = 10A, VCE = 10V IC = 20A, VCE(CLP) = 300V, L = 25H, TJ = +100oC, VGE = 10V, RG = 25 1070 (Typ) 1.25 1.5 1.8 60 ns V ns Typical Performance Curves NORMALIZED GATE THRESHOLD VOLTAGE (V) VGE = VCE, IC = 1mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 RATED POWER DISSIPATION (%) 100 80 60 40 20 0 +25 +50 +75 +150 +100 +125 +150 -50 0 +50 +100 +150 TC , CASE TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 1. POWER DISSIPATION vs TEMPERATURE DERATING CURVE FIGURE 2. TYPICAL NORMALIZED GATE-THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 3-72 HGTG20N50C1D Typical Performance Curves (Continued) 35 ICE, COLLECTOR CURRENT (A) 30 25 20 15 10 -40oC 5 0 2.5 5.0 7.5 10 0 1 2 3 4 5 VGE, GATE-TO-EMITTER VOLTAGE (V) +25oC +125oC ICE, COLLECTOR CURRENT (A) VCE = 10V, PULSE TEST PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 35 VGE = 20V 30 25 20 15 10 5 VGE = 10V VGE = 8V VGE = 7V VGE = 6V VGE = 5V VGE = 4V TC = +25oC VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FIGURE 4. TYPICAL SATURATION CHARACTERISTICS 2700 VCE = 10V, PULSE TEST ICE, COLLECTOR CURRENT (A) 35 30 25 20 15 10 5 0 1 2 3 4 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX C, CAPACITANCE (pF) 2250 f = 0.1MHz 1800 1350 CISS 900 COSS 450 CRSS 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE vs COLLECTOR CURRENT FIGURE 6. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE VCE(ON), COLLECTOR-EMITTER VOLTAGE (V) 3.00 400 IC = 20A, VGE = 10V, VCE(CLP) = 300V tD(OFF)I , SWITCHING TIME (ns) 2.75 IC = 20A, VGE = 10V L = 25H, RG = 25 300 2.50 IC = 20A, VGE = 15V 2.25 200 2.00 IC = 10A, VGE = 10V 1.75 IC = 10A, VGE = 15V +50 +75 +100 +125 +150 100 1.50 +25 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. TYPICAL VCE(ON) vs TEMPERATURE FIGURE 8. TYPICAL TURN-OFF DELAY TIME 3-73 HGTG20N50C1D Typical Performance Curves (Continued) 800 WOFF = IC * VCEdt VGE IC 600 tFI , FALL TIME (ns) VCE 500 400 300 200 100 0 +25 +50 +75 +100 +125 +150 TJ , JUNCTION TEMPERATURE (oC) 700 IC = 10A, VGE = 10V, VCE(CLP) = 300V L = 25H, RG = 25 FIGURE 9. TYPICAL INDUCTIVE SWITCHING WAVEFORMS 800 700 600 tFI , FALL TIME (ns) 500 400 300 200 100 0 +25 +50 +75 +100 +125 (oC) +150 IC = 20A, VGE = 10V, VCE(CLP) = 300V WOFF , TURN OFF ENERGY (mJ) L = 25H, RG = 25 1000 900 800 700 600 500 400 300 200 100 0 FIGURE 10. TYPICAL FALL TIME (IC = 10A) VGE = 10V, VCE(CLP) = 300V L = 25H, RG = 25 +25 +50 +75 +100 +125 (oC) +150 TJ , JUNCTION TEMPERATURE TJ , JUNCTION TEMPERATURE FIGURE 11. TYPICAL FALL TIME (IC = 20A) FIGURE 12. TYPICAL CLAMPED INDUCTIVE TURN-OFF SWITCHING LOSS/CYCLE 10 80 VCE, COLLECTOR-EMITTER VOLTAGE (V) 500 VCC = BVCES 375 GATE EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE (V) 8 70 t, RECOVERY TIMES (ns) 60 50 40 30 tA 20 10 tB tRR 6 250 VCC = 0.25 BVCES RL = 25 IG(REF) = 0.76mA VGE = 10V COLLECTOR-EMITTER VOLTAGE 0 20 0 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 4 125 2 0 1 10 IEC , EMITTER-COLLECTOR CURRENT (A) 100 NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off is not accurately represented by this normalization. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) FIGURE 14. TYPICAL tRR, tA, tB vs FORWARD CURRENT 3-74 HGTG20N50C1D Typical Performance Curves (Continued) 100 IEC , EMITTER-COLLECTOR CURRENT (A) 10 TJ = +150oC 1.0 TJ = +100oC 0.1 TJ = +25oC 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VEC , EMITTER-COLLECTOR VOLTAGE (V) FIGURE 15. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC Test Circuit RL = 4 L = 25H 1/RG = 1/RGEN + 1/RGE RGEN = 50 80V VCE (CLP) = 300V 20V 0V RGE = 50 FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-75 |
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